inchange semiconductor isc product specification isc silicon npn power transistor 2SC2769 description high collector-emitter breakdown voltage- : v (br)ceo = 200v(min) high switching speed high reliability applications switching regulators dc-dc converter solid state relay general purpose power amplifiers absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 250 v v ceo collector-emitter voltage 200 v v ceo(sus) collector-emitter voltage 200 v v ebo emitter-base voltage 7 v i c collector current-continuous 10 a i b b base current-continuous 5 a p c collector power dissipation @ t c =25 100 w t j junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.25 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC2769 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 10ma; i b = 0 200 v v ceo(sus) collector-emitter sustaining voltage i c = 1a; i b = 0 b 200 v v (br)cbo collector-base breakdown voltage i c = 0.1ma ; i e = 0 250 v v (br)ebo emitter-base breakdown voltage i e = 0.1ma ; i c = 0 7 v v ce (sat) collector-emitter saturation voltage i c = 2a; i b = 0.8a b 0.2 v v be (sat) base-emitter saturation voltage i c = 5a; i b = 1a b 1.1 v i cbo collector cutoff current v cb = 250v; i e =0 0.1 ma i ebo emitter cutoff current v eb = 7v; i c =0 0.1 ma h fe dc current gain i c = 2a; v ce = 5v 20 60 switching times t on turn-on time 0.8 s t stg storage time 2.0 s t f fall time i c = 6a , i b1 = -i b2 = 1.2a r l = 10 ;p w =20 s duty cycle 2% 0.5 s isc website www.iscsemi.cn 2
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